shantou huashan electronic devices co.,ltd . applications high voltage switching applications. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 180 v i c =10 a, i e =0 bv ceo collector-emitter breakdown voltage 160 v i c =1ma, i b =0 bv ebo emitter-base breakdown voltage 6 v i e =10 a i c =0 i cbo collector cut-off current 0.1 a v cb =120v, i e =0 i ebo emitter cut-off current 0.1 a v eb =4v, i c =0 h fe(1) dc current gain 100 400 v ce =5v, i c =100ma h fe(2) 80 v ce =5v, i c =10ma v ce(sat) collector- emitter saturation voltage 0.12 0.4 v i c =250ma, i b =25ma v be(sat) base-emitter saturation voltage 0.85 1.2 v i c =250ma, i b =25ma f t current gain-bandwidth product 120 mhz v ce =10v, i c =50ma cob output capacitance 8 pf v cb =10v, i e =0 t on turn-on time 50 ns t stg storage time 1000 ns t f fall time 60 ns see specified test circuit h fe classification switching test circuit r s t 100200 140280 200400 t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation 700mw v cbo collector-base voltage 180v v ceo collector-emitter voltage 160v v ebo emitter-base voltage 6v i c collector current 0.7a i cp collector current pulse 1.5a 1 D emitter e 2 D collector c 3 D base b to-92 H3332 npn s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . H3332 npn s i l i c o n t r a n s i s t o r
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